
MPC5200 Data Sheet, Rev. 4
Electrical and Thermal Characteristics
Freescale Semiconductor20
3.3.5 SDRAM
3.3.5.1 Memory Interface Timing-Standard SDRAM Read Command
Figure 5. Timing Diagram—Standard SDRAM Memory Read Timing
3.3.5.2 Memory Interface Timing-Standard SDRAM Write Command
In Standard SDRAM, all signals are activated on the Mem_clk from the Memory Controller and captured
on the Mem_clk clock at the memory device.
Table 18. Standard SDRAM Memory Read Timing
Sym Description Min Max Units SpecID
t
mem_clk
MEM_CLK period 7.5 — ns A5.1
t
valid
Control Signals, Address and MBA Valid after
rising edge of MEM_CLK
—t
mem_clk
*0.5+0.4 ns A5.2
t
hold
Control Signals, Address and MBA Hold after
rising edge of MEM_CLK
t
mem_clk
*0.5 — ns A5.3
DM
valid
DQM valid after rising edge of MEM_CLK — t
mem_clk
*0.25+0.4 ns A5.4
DM
hold
DQM hold after rising edge of MEM_CLK t
mem_clk
*0.25-0.7 — ns A5.5
data
setup
MDQ setup to rising edge of MEM_CLK — 0.3 ns A5.6
data
hold
MDQ hold after rising edge of MEM_CLK 0.2 — ns A5.7
MEM_CLK
Control Signals
MDQ (Data)
MA (Address)
NOTE: Control Signals are composed of RAS, CAS, MEM_WE
, MEM_CS, MEM_CS1 and CLK_EN
Active NOP READ NOPNOPNOP NOP
t
hold
Row Column
MBA (Bank Selects)
t
valid
t
hold
t
valid
t
hold
t
valid
DQM (Data Mask)
DM
valid
DM
hold
NOP
data
hold
data
setup
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