
Electrical and Thermal Characteristics
MPC5200 Data Sheet, Rev. 4
Freescale Semiconductor 9
3.1.4 Electrostatic Discharge
CAUTION
This device contains circuitry that protects against damage due to
high-static voltage or electrical fields. However, it is advised that normal
precautions be taken to avoid application of any voltages higher than
maximum-rated voltages. Operational reliability is enhanced if unused
inputs are tied to an appropriate logic voltage level (i.e., either GND or
V
CC
). Table 7 gives package thermal characteristics for this device.
3.1.5 Power Dissipation
Power dissipation of the MPC5200 is caused by 3 different components: the dissipation of the internal or
core digital logic (supplied by VDD_CORE), the dissipation of the analog circuitry (supplied by
SYS_PLL_AVDD and CORE_PLL_AVDD) and the dissipation of the IO logic (supplied by
VDD_IO_MEM and VDD_IO). Table 6 details typical measured core and analog power dissipation
figures for a range of operating modes. However, the dissipation due to the switching of the IO pins can
not be given in general, but must be calculated by the user for each application case using the following
formula
DRV8_OD VDD_IO = 3.3V - 8 mA D3.27
DRV16_MEM VDD_IO_MEM = 3.3V 16 16 mA D3.28
DRV16_MEM VDD_IO_MEM = 2.5V 16 16 mA D3.29
PCI VDD_IO = 3.3V 16 16 mA D3.30
Table 5. ESD and Latch-Up Protection Characteristics
Sym Rating Min Max Unit SpecID
V
HBM
Human Body Model (HBM)—JEDEC JESD22-A114-B 2000 — V D4.1
V
MM
Machine Model (MM)—JEDEC JESD22-A115 200 — V D4.2
V
CDM
Charge Device Model (CDM)—JEDEC JESD22-C101 500 — V D4.3
I
LAT
Latch-up Current at T
A
=85
o
C
positive
negative
+100
-100
—mA
D4.4
I
LAT
Latch-up Current at T
A
=27
o
C
positive
negative
+200
-200
—mA
D4.5
Table 4. Drive Capability of MPC5200 Output Pins (continued)
Driver Type Supply Voltage I
OH
I
OL
Unit SpecID
P
IO
P
IOint
N
M
∑
+ CVDD_IO
2
f×××=
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